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Tension-Induced Raman Enhancement of Graphene Membranes in the Stretched State

Kai-Ming Hu1, Zhong-Ying Xue2, Yun-Qi Liu2

  • 1State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.

Small (Weinheim an Der Bergstrasse, Germany)
|December 4, 2018
PubMed

Keywords:
G band depression effectRaman enhancement phenomenonbuilt-in stressesintensity ratiosstretched graphene

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