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Related Concept Videos

Properties of Transition Metals02:58

Properties of Transition Metals

29.8K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
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Crystal Field Theory - Octahedral Complexes02:58

Crystal Field Theory - Octahedral Complexes

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Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
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Phase Transitions02:31

Phase Transitions

23.2K
Whether solid, liquid, or gas, a substance's state depends on the order and arrangement of its particles (atoms, molecules, or ions). Particles in the solid pack closely together, generally in a pattern. The particles vibrate about their fixed positions but do not move or squeeze past their neighbors. In liquids, although the particles are closely spaced, they are randomly arranged. The position of the particles are not fixed—that is, they are free to move past their neighbors to...
23.2K
Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

48.4K
Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
48.4K
Solution Equilibrium and Saturation01:59

Solution Equilibrium and Saturation

21.9K
Imagine adding a small amount of sugar to a glass of water, stirring until all the sugar has dissolved, and then adding a bit more. You can repeat this process until the sugar concentration of the solution reaches its natural limit, a limit determined primarily by the relative strengths of the solute-solute, solute-solvent, and solvent-solvent attractive forces. You can be certain that you have reached this limit because, no matter how long you stir the solution, undissolved sugar remains. The...
21.9K
Phase Transitions: Vaporization and Condensation02:39

Phase Transitions: Vaporization and Condensation

21.3K
The physical form of a substance changes on changing its temperature. For example, raising the temperature of a liquid causes the liquid to vaporize (convert into vapor). The process is called vaporization—a surface phenomenon. Vaporization occurs when the thermal motion of the molecules overcome the intermolecular forces, and the molecules (at the surface) escape into the gaseous state. When a liquid vaporizes in a closed container, gas molecules cannot escape. As these gas phase molecules...
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Related Experiment Video

Updated: Feb 1, 2026

Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol
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Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol

Published on: December 20, 2016

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Solution Processing for Lateral Transition-Metal Dichalcogenides Homojunction from Polymorphic Crystal.

Jiajing Wu, Jing Peng, Yuan Zhou

    Journal of the American Chemical Society
    |December 14, 2018
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed a new solution-processing method for creating high-yield lateral semiconductor-metal homojunctions from transition-metal dichalcogenides (TMDs). This technique simplifies the synthesis of these crucial components for advanced 2D electronics.

    More Related Videos

    Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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    Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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    Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
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    Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

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    Related Experiment Videos

    Last Updated: Feb 1, 2026

    Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol
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    Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol

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    Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
    08:50

    Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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    Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
    11:09

    Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

    Published on: June 23, 2017

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    Area of Science:

    • Materials Science
    • Nanotechnology
    • Condensed Matter Physics

    Background:

    • Transition-metal dichalcogenides (TMDs) are key materials for next-generation 2D electronics.
    • Synthesizing homojunctions of TMD polymorphs at the nanoscale is challenging.
    • Lateral semiconductor-metal homojunctions are essential for advanced electronic devices.

    Purpose of the Study:

    • To develop a scalable solution-processing strategy for synthesizing lateral TMD homojunctions.
    • To demonstrate the fabrication of 1T-2H TMD homojunction monolayers.
    • To improve the performance of devices based on these homojunctions.

    Main Methods:

    • Precisely controlled lithiation to create polymorphic crystal precursors with 1T-2H domains.
    • Programmed exfoliation to laminate individual phases into monolayers.
    • Characterization of homojunction structure, boundaries, and band alignment.

    Main Results:

    • High-yield production of lateral semiconductor-metal homojunctions.
    • Fabrication of 1T-2H TMD homojunction monolayers up to tens of micrometers.
    • Atomically sharp interfaces and superior band alignment in the homojunctions.
    • A 50% reduction in electric field strength for state transition in devices.

    Conclusions:

    • Solution processing with programmed exfoliation is a powerful method for creating novel 2D nanomaterial configurations.
    • This approach simplifies the synthesis of complex TMD homojunctions.
    • The developed homojunctions offer improved device performance for 2D electronics.