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Intrinsic Correlation between Electronic Structure and Degradation: From Few-Layer to Bulk Black Phosphorus
Minju Kim1, Han-Gyu Kim1, Soohyung Park2
1Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul, Republic of Korea.
Angewandte Chemie (International Ed. in English)
|December 15, 2018
Summary
Black phosphorus (BP) degrades quickly, but this study reveals layer-dependent oxidation mechanisms in the dark. Understanding these processes is key to designing more stable black phosphorus electronics.
Area of Science:
- Materials Science
- Surface Science
- Semiconductor Physics
Background:
- Black phosphorus (BP) exhibits excellent electronic properties like high carrier mobility and a tunable band gap.
- The practical application of BP is severely limited by its rapid degradation under ambient conditions.
- Elucidating the precise degradation mechanisms is crucial for overcoming stability issues.
Purpose of the Study:
- To investigate the sequential degradation processes of black phosphorus (BP) in the dark.
- To analyze the influence of layer number on BP degradation rates.
- To provide a mechanistic understanding of BP degradation for improved device stability.
Main Methods:
- Scanning Kelvin Probe Microscopy (SKPM) was employed to measure degradation.
- Theoretical modeling was utilized to analyze degradation pathways.
- Marcus-Gerischer theory (MGT) was applied to model oxidation processes.
Main Results:
- Two distinct sequential degradation processes in BP were identified.
- The degradation rate of BP was found to be dependent on the number of layers.
- The layer-dependent degradation was successfully explained by an oxidation model based on MGT.
Conclusions:
- Electron transfer from BP to oxygen is layer-dependent due to varying carrier concentrations.
- This research deepens the understanding of black phosphorus degradation mechanisms.
- The findings offer strategies for developing more stable BP-based electronic devices.
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