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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based

Huolin Huang1,2, Feiyu Li3, Zhonghao Sun4

  • 1School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China. hlhuang@dlut.edu.cn.

Micromachines
|December 19, 2018
PubMed

Keywords:
analytical modelgallium nitride (GaN)high electron mobility transistors (HEMTs)high-temperature operationthreshold voltage (Vth) stability

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