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Atomic Spectroscopy: Effects of Temperature01:27

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GeVn complexes for silicon-based room-temperature single-atom nanoelectronics.

Simona Achilli1, Nicola Manini2, Giovanni Onida2

  • 1Dipartimento di Fisica, Università degli Studi di Milano and European Theoretical Spectroscopy Facility - ETSF, Via Celoria 16, 20133, Milano, Italy. simona.achilli@unimi.it.

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This summary is machine-generated.

Germanium-vacancy complexes offer a promising route for room-temperature quantum effects in silicon devices. These defects enable stable quantum operations at higher temperatures compared to traditional dopants.

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Area of Science:

  • Quantum physics
  • Materials science
  • Solid-state physics

Background:

  • Exploiting single-atom quantum effects is crucial for advanced semiconductor devices.
  • Conventional dopants like phosphorus have limitations for room-temperature quantum applications.

Purpose of the Study:

  • To investigate germanium-vacancy complexes (GeVn) as potential candidates for room-temperature quantum effects in silicon.
  • To assess the viability of GeVn defects for stable quantum device operation.

Main Methods:

  • Ab-initio Density Functional Theory (DFT) calculations.
  • Utilizing a parameter-free screened-dependent hybrid functional scheme.
  • Accurate single-atom implantation techniques for defect localization.

Main Results:

  • Predicted defect-related excited states in GeVn complexes are sufficiently deep for room-temperature operation.
  • Wavefunctions of GeVn defects are significantly more localized than those of conventional dopants.
  • High controllability of defect location via single-atom implantation is demonstrated.

Conclusions:

  • Germanium-vacancy complexes are viable for exploiting single-atom quantum effects at room temperature.
  • GeVn defects offer enhanced stability and localization for quantum applications in silicon devices.