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Related Experiment Video

Updated: Jan 31, 2026

A Continuous-flow Photocatalytic Reactor for the Precisely Controlled Deposition of Metallic Nanoparticles

A Continuous-flow Photocatalytic Reactor for the Precisely Controlled Deposition of Metallic Nanoparticles

Published on: April 10, 2019

Controlling graphene work function by doping in a MOCVD reactor.

Chen Klein¹, Doron Cohen-Elias², Gabby Sarusi¹

¹Electrooptic and Photonics Engineering Department, Ben-Gurion University of the Negev and Ilse Katz Center for Nanoscience and Nanotechnology, Beer Sheva, 8410501, Israel.

|December 25, 2018

Summary

This summary is machine-generated.

This study introduces a novel Metal Organic Chemical Vapor Deposition (MOCVD) method for doping graphene. This technique effectively modifies graphene

Keywords:

Materials science Nanotechnology

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Synthesis and Functionalization of 3D Nano-graphene Materials: Graphene Aerogels and Graphene Macro Assemblies

Synthesis and Functionalization of 3D Nano-graphene Materials: Graphene Aerogels and Graphene Macro Assemblies

Published on: November 5, 2015

Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

High-quality graphene on Si/SiO2 substrates is crucial for advanced electronic applications.
Controlling graphene's electronic properties through doping is essential for device optimization.

Purpose of the Study:

To develop and demonstrate a new method for doping graphene using Metal Organic Chemical Vapor Deposition (MOCVD).
To investigate the effects of doping with tertiarybutylphosphine (TBP) and tertiarybutylarsene (TBA) on graphene's properties.

Main Methods:

Graphene doping was performed in an MOCVD reactor using TBP and TBA.
Characterization involved Raman spectroscopy to confirm doping and p-type conductivity.
Ultraviolet photoelectron spectroscopy (UPS) was used to measure work function changes.

Main Results:

Successfully achieved single-layer phosphor-doped graphene (G/P) and arsine-doped graphene (G/As).
Confirmed p-type doping via blue shift in Raman 2D peaks.
Observed work function increases from 4.5 eV (pristine) to 4.7 eV (G/As) and 4.8 eV (G/P).

Conclusions:

MOCVD doping with TBA or TBP effectively alters graphene's work function by tenths of an eV.
This method enhances graphene's electronic properties and offers a pathway for epitaxial growth of other semiconductors.
The MOCVD doping technique provides a versatile route for advanced graphene-based device fabrication.