Interfacial Engineering by Indium-Doped CdS for High Efficiency Solution Processed Sb₂(S_{1- x}Se _x)₃ Solar Cells

Area of Science:

• Materials Science
• Renewable Energy
• Photovoltaics

Background:

• Antimony(III) sulfide selenide (Sb₂(S_{1- x}Se _x)₃) is a promising material for solar cells due to its high absorption, suitable bandgap, stability, and elemental abundance.
• Effective charge carrier transport, crucial for high photoelectric conversion efficiency (PCE), relies heavily on interfacial engineering in solar cells.

Purpose of the Study:

• To enhance the photovoltaic performance of Sb₂(S_{1- x}Se _x)₃ solar cells through interfacial engineering.
• To investigate the impact of an indium-doped cadmium sulfide (CdS) thin film interlayer on device performance.

Main Methods:

• Fabrication of indium-doped CdS thin films using chemical bath deposition.
• Integration of the CdS interlayer into Sb₂(S_{1- x}Se _x)₃ solar cell architecture.
• Characterization of the interlayer's optical and electrical effects on device performance.

Main Results:

• The indium-doped CdS interlayer significantly improved the photovoltaic performance of Sb₂(S_{1- x}Se _x)₃ solar cells.
• Opto-electrical optimization of the device quality was achieved through the interlayer.
• A record PCE of 6.63% was obtained for planar heterojunction Sb₂(S_{1- x}Se _x)₃ solar cells, surpassing previous records.

Conclusions:

• Indium-doped CdS thin films serve as an effective interlayer for enhancing Sb₂(S_{1- x}Se _x)₃ solar cells.
• This interfacial engineering strategy offers a pathway to high-performance Sb₂(S_{1- x}Se _x)₃ solar cells.
• The study demonstrates a viable method for optimizing charge carrier transport and device efficiency.