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Updated: Jan 31, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Kyungsoo Jang1, Youngkuk Kim2, Pham Duy Phong3

  • 1College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Korea. jks30716@skku.edu.

Materials (Basel, Switzerland)
|January 10, 2019
PubMed

Keywords:
FT-IRLTPS TFTRamanleakage currentpoly-Si TFTsurface passivation

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