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Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers

Byeong Ryong Lee1, Ju Hyun Park1, Tae Ho Lee1

  • 1School of Electrical Engineering , Korea University , 145 Anam-ro, Sungbuk-gu , Seoul 02841 , Republic of Korea.

ACS Applied Materials & Interfaces
|January 10, 2019
PubMed

Keywords:
Al2O3/Ag/Al2O3ZnO/Ag/ZnOfilamentmemristive devicetransparent and flexible electrode

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