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Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change
Min Su Kang1, Jong Min Joo1, Jun Young Choi2
1School of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|July 25, 2026
Summary
Nitrogen-doped Germanium-Telluride-Sulfide (N-GeTeS) Ovonic Threshold Switching (OTS) selectors overcome durability and thermal stability issues in memory arrays. This innovation enhances performance for high-density, low-power memory applications.
Area of Science:
- Materials Science
- Solid-State Electronics
- Non-Volatile Memory Technology
Background:
- Ovonic threshold switching (OTS) selectors are crucial for high-density memory arrays, preventing sneak-path currents.
- Existing amorphous chalcogenide OTS selectors suffer from poor durability, thermal stability, and a speed-voltage trade-off.
Purpose of the Study:
- To develop a novel OTS selector material with improved durability, thermal stability, and switching characteristics.
- To investigate the effects of nitrogen doping on Ge-Te-S (GeTeS) composition for enhanced performance.
Main Methods:
- Fabrication of Ge-Te-S (GeTeS) mixed composition via co-sputtering Te and S.
- Development of nitrogen-doped GeTeS (N-GeTeS) by incorporating nitrogen into the GeTeS matrix.
- Characterization of N-GeTeS OTS device performance, including durability, thermal stability, switching speed, threshold voltage, leakage current, and on/off ratio.
Main Results:
- N-GeTeS exhibits excellent durability (≈10^10 cycles) and high crystallization temperature (≈470°C).
- Achieved fast switching speed (≈18 ns), low threshold voltage (≈1.5 V), low leakage current (≈2.8 × 10^-9 A), and high on/off ratio (≈3×10^5).
- Nitrogen doping suppressed unstable bonds, reduced trap density, improved threshold voltage uniformity, and widened the band gap.
Conclusions:
- N-GeTeS demonstrates significant improvements over traditional OTS selectors, addressing key limitations.
- The N-GeTeS selector enables stable operation in a one-selector-one-resistor configuration with phase-change memory.
- N-GeTeS shows strong potential for scalable, high-density memory array applications.
Keywords:
1S–1R architectureOTS selectorcrosspoint arraynitrogen‐doped GeTeSovonic threshold switchingphase‐change memoryMore Related Videos
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