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Updated: Jan 30, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
A WSe2 vertical field emission transistor.
Antonio Di Bartolomeo1, Francesca Urban, Maurizio Passacantando
1Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy. adibartolomeo@unisa.it.
Researchers demonstrated gate-controlled field emission from tungsten diselenide (WSe2) monolayers. This breakthrough enables new WSe2 devices for vacuum electronics applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Tungsten diselenide (WSe2) is a promising 2D material for electronic applications.
- Field emission is crucial for vacuum electronic devices.
- Controlling field emission in 2D materials remains a challenge.
Purpose of the Study:
- To investigate the field emission properties of WSe2 monolayers.
- To demonstrate gate control over field emission in WSe2.
- To develop a WSe2-based field-emission transistor.
Main Methods:
- Synthesis of WSe2 monolayer via chemical-vapour deposition on SiO2/Si.
- Fabrication of Ni-contacted WSe2 back-gated transistors.
- Characterization of electrical transport and field emission under high vacuum.
Main Results:
- Observation of n-type conduction in WSe2 transistors.
- Demonstration of gate-controlled field emission current from WSe2.
- Achieved stable electron emission at electric fields of ~100 V μm-1.
- Successful fabrication of the first WSe2 monolayer field-emission vertical transistor.
Conclusions:
- WSe2 monolayers exhibit gate-tunable field emission capabilities.
- The demonstrated WSe2 field-emission transistor opens new avenues for vacuum electronics.
- Further optimization of WSe2-based devices for advanced applications is feasible.
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