A WSe2 vertical field emission transistor.

Antonio Di Bartolomeo1, Francesca Urban, Maurizio Passacantando

  • 1Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy. adibartolomeo@unisa.it.

Nanoscale
|January 11, 2019
PubMed
Summary

Researchers demonstrated gate-controlled field emission from tungsten diselenide (WSe2) monolayers. This breakthrough enables new WSe2 devices for vacuum electronics applications.

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