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Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers.
Florian Vigneau1, Raisei Mizokuchi1, Dante Colao Zanuz1
1Université Grenoble Alpes, CEA, INAC-Pheliqs , 38000 Grenoble , France.
Nano Letters
|January 12, 2019
Summary
Researchers created novel hybrid superconductor-semiconductor devices using germanium channels and aluminum leads. These Josephson field-effect transistors demonstrate gate-controlled supercurrents, advancing quantum computing applications.
Area of Science:
- Condensed Matter Physics
- Quantum Computing
Background:
- Hybrid superconductor-semiconductor structures are crucial for quantum computing.
- Topological superconducting systems and tunable superconducting qubits are key applications.
Purpose of the Study:
- To realize prototypical hybrid devices using SiGe/Ge/SiGe heterostructures and aluminum leads.
- To investigate gate-controlled supercurrent transport in germanium channels.
Main Methods:
- Fabrication of hybrid devices including Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs).
- Utilizing SiGe/Ge/SiGe quantum-well heterostructures with two-dimensional holes.
- Employing tunnel spectroscopy to estimate the induced superconducting gap.
- Transmission electron microscopy for interface analysis.
Main Results:
- Observed gate-controlled supercurrent transport in germanium channels up to one micrometer.
- Estimated the induced superconducting gap.
- Transmission electron microscopy confirmed germanium diffusion into aluminum contacts, with no aluminum detected in the germanium channel.
Conclusions:
- Demonstrated the feasibility of hybrid superconductor-semiconductor devices for quantum applications.
- Highlighted the potential of germanium channels for realizing advanced quantum devices.
- Interface properties are critical for device performance.
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