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Implementation of a CMOS/MEMS Accelerometer with ASIC Processes.

Yu-Sian Liu1, Kuei-Ann Wen2

  • 1Institute of Electronic Engineering, National Chiao Tung University, Hsinchu 300, Taiwan. thomas.ee02g@nctu.edu.tw.

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Summary
This summary is machine-generated.

This study introduces a novel tri-axis accelerometer combining CMOS and MEMS technology. Fabricated using a 0.18 μm process, it achieves a resonant frequency of 5.35 kHz.

Keywords:
accelerometer designanalytical modelspring design

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Area of Science:

  • Micro-electromechanical systems (MEMS)
  • Integrated circuit technology

Background:

  • Development of miniaturized inertial sensors is crucial for various applications.
  • Existing accelerometers face challenges in integration and performance.

Purpose of the Study:

  • To present the design, simulation, and characterization of a novel CMOS/MEMS tri-axis accelerometer.
  • To demonstrate the feasibility of monolithic integration for improved sensor performance.

Main Methods:

  • Utilized a 0.18 μm application-specific integrated circuit (ASIC)-compatible CMOS/MEMS fabrication process.
  • Developed an approximate analytical model for spring design.
  • Performed mechanical characterization and resonant frequency analysis.

Main Results:

  • Successfully fabricated a monolithic CMOS/MEMS tri-axis accelerometer.
  • Achieved a resonant frequency of approximately 5.35 kHz for out-of-plane vibration.
  • The device occupies a compact area of 1096 μm × 1256 μm.

Conclusions:

  • The proposed design offers a viable solution for integrated tri-axis accelerometers.
  • The CMOS/MEMS approach enables miniaturization and potentially enhanced performance.
  • Further research can explore optimization for specific application requirements.