Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature

Area of Science:

• Quantum physics
• Materials science
• Condensed matter physics

Background:

• Optically addressable spins in wide-bandgap semiconductors are key for quantum technologies.
• Hexagonal boron nitride (h-BN) is a promising van der Waals material for quantum emitters.
• Spin-related effects in h-BN quantum emitters have not been previously observed.

Purpose of the Study:

• To investigate spin-related optical properties of quantum emitters in hexagonal boron nitride (h-BN).
• To determine if optically addressable spin defects exist in h-BN at room temperature.

Main Methods:

• Studied photoluminescence (PL) patterns of h-BN quantum emitters under an applied magnetic field.
• Analyzed field-dependent variations in steady-state PL and photon emission statistics.
• Utilized an electronic model involving spin-dependent inter-system crossing between triplet and singlet states.

Main Results:

• Observed strongly anisotropic photoluminescence patterns dependent on the applied magnetic field at room temperature.
• Demonstrated field-dependent changes in steady-state photoluminescence and photon emission statistics.
• Results are consistent with a model of spin-dependent inter-system crossing.

Conclusions:

• Optically-addressable spin defects are present in hexagonal boron nitride (h-BN).
• These findings validate h-BN as a robust platform for quantum information processing and nanoscale sensing.
• The observed spin effects pave the way for novel quantum applications using h-BN.