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Defect Localization and Nanofabrication for Conductive Structures with Voltage Contrast in Helium Ion Microscopy.

Deying Xia1, Shawn McVey1, Chuong Huynh1

  • 1Carl Zeiss SMT Inc, PCS Integration Center , One Corporation Way , Peabody , Massachusetts 01960 , United States.

ACS Applied Materials & Interfaces
|January 16, 2019
PubMed
Summary

Helium ion microscopy (HIM) with passive voltage contrast (PVC) offers a damage-free method for nanoscale failure analysis in electronic devices. This technique enables precise defect localization and circuit editing, improving semiconductor analysis.

Keywords:
XeF2defectetchingfocused ion beamhelium ion microscopynanofabricationvoltage contrast

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Semiconductor device dimensions are shrinking to the nanoscale, necessitating advanced failure analysis techniques.
  • Gallium-focused ion beam (Ga-FIB) and scanning electron microscopy (SEM) are used for voltage contrast analysis but can cause surface damage and offer limited resolution.
  • A need exists for high-resolution, low-damage methods for failure analysis and process evaluation at the nanoscale.

Purpose of the Study:

  • To introduce and evaluate Helium Ion Microscopy (HIM) with passive voltage contrast (PVC) as a superior method for nanoscale failure analysis.
  • To demonstrate HIM's capability for precise defect localization and circuit editing with minimal sample damage.
  • To explore the use of XeF2 gas assistance with HIM for nanofabrication, specifically metal disconnection.

Main Methods:

  • Utilized Helium Ion Microscopy (HIM) for imaging and fabrication at the nanoscale.
  • Employed passive voltage contrast (PVC) in HIM images to detect electrical potential differences and localize defects.
  • Investigated the use of XeF2 gas with both helium and neon ion beams for controlled nanofabrication, including metal disconnection.

Main Results:

  • HIM with PVC effectively localized defects in conductive structures with high voltage contrast and sub-10 nm resolution.
  • Minimal damage was observed on the analyzed areas, a significant improvement over Ga-FIB.
  • XeF2 gas assistance enabled precise metal disconnection using both helium and neon ion beams, with neon showing a faster etching rate.
  • PVC imaging proved effective for verifying circuit edits and localizing both single and multiple defects.

Conclusions:

  • HIM with PVC is an efficient, low-damage technique for nanoscale failure analysis and defect localization in semiconductor devices.
  • The combination of HIM and XeF2 gas facilitates controlled nanofabrication, including precise circuit editing and disconnection.
  • This approach offers significant advantages over traditional methods like Ga-FIB for advanced electronic device analysis and manufacturing.