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Updated: Jan 30, 2026

Preparation of Mica and Silicon Substrates for DNA Origami Analysis and Experimentation
Published on: July 23, 2015
Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered
Abstract:
The influence of the removal depth of a silicon modification layer on grating structures and mirrors is studied. The removal depth 6-14 μm is the optimization result for Si-modified reaction-sintered silicon carbide (RS-SiC) used as mirror substrates, but the removal depth 9-12 μm is the optimization result for Si-modified RS-SiC used as grating substrates. The diffraction efficiency and stray light of the gratings fabricated in the Si-modified RS-SiC substrates with removal depth 9-12 μm is 90.5%-94% and 5.30×10-7-5.45×10-7, respectively. Additionally, the number and scale of high-reflection points can be used as the basis for judging the removal depth of the Si-modified RS-SiC used as grating substrates. These results and the regularity have guiding significance for the application of Si-modified RS-SiC as a microstructural substrate.
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