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A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode.

Anbang Zhang1, Qi Zhou2, Chao Yang3

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|January 16, 2019
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Summary

Researchers developed a novel AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD). This device offers stable current output across a wide temperature range, ideal for power electronics applications.

Keywords:
AlGaN/GaN heterostructureReverse blocking current regulating diode (RB-CRD)Schottky barrier diode (SBD)

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Gallium Nitride (GaN) based devices are crucial for high-power and high-frequency applications due to their superior material properties.
  • Current regulating diodes (CRDs) are essential components for stabilizing current in electronic circuits, particularly under varying conditions.
  • Lateral device structures offer advantages in scalability and integration for advanced semiconductor applications.

Purpose of the Study:

  • To propose and experimentally demonstrate a novel AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD).
  • To integrate a Schottky barrier diode (SBD) anode with a hybrid trench cathode for enhanced current regulation.
  • To evaluate the performance characteristics, including voltage ratings and temperature stability, of the proposed RB-CRD.

Main Methods:

  • Fabrication of an AlGaN/GaN lateral RB-CRD on a silicon substrate utilizing trench technology for both anode and cathode.
  • Integration of a Schottky barrier diode (SBD) in the anode structure to achieve reverse blocking capability.
  • Characterization of the device's electrical performance, including turn-on voltage, reverse breakdown voltage, knee voltage, and forward operating voltage.
  • Testing of the RB-CRD's current regulating capability and temperature stability over a wide operational range (25°C to 300°C).

Main Results:

  • The integrated SBD anode demonstrated a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V.
  • The hybrid trench cathode functioned as a CRD, enabling a knee voltage of 1.3 V and forward operation beyond 200 V.
  • The RB-CRD exhibited excellent steady current output across temperatures from 25°C to 300°C.
  • The forward regulating current showed small negative temperature coefficients, less than -0.152%/°C.

Conclusions:

  • The proposed AlGaN/GaN lateral RB-CRD with trench Schottky anode and hybrid trench cathode is experimentally validated.
  • The device offers robust current regulation with high voltage ratings and exceptional stability over an extensive temperature range.
  • This novel RB-CRD presents a promising solution for stable current delivery in demanding power electronic applications.