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Diffusion is the passive movement of substances down their concentration gradients—requiring no expenditure of cellular energy. Substances, such as molecules or ions, diffuse from an area of high concentration to an area of low concentration in the cytosol or across membranes. Eventually, the concentration will even out, with the substance moving randomly but causing no net change in concentration. Such a state is called dynamic equilibrium, which is essential for maintaining overall...
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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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Oxygen diffusion in amorphous and partially crystalline gallium oxide.

Alexandra von der Heiden1, Manuel Bornhöfft, Joachim Mayer

  • 1Institute of Physical Chemistry, RWTH Aachen University, Landoltweg 2, 52074 Aachen, Germany. vonderheiden@pc.rwth-aachen.de.

Physical Chemistry Chemical Physics : PCCP
|January 19, 2019
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Summary

This study investigated oxygen transport in amorphous gallium oxide thin films using isotope exchange and ToF-SIMS. Researchers determined oxygen diffusion and surface exchange coefficients, revealing an activation energy of 0.8 eV for amorphous gallium oxide.

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Area of Science:

  • Materials Science
  • Solid State Chemistry
  • Surface Science

Background:

  • Gallium oxide (GaO1.5) is a promising material for various electronic applications.
  • Understanding oxygen transport is crucial for optimizing its performance and stability.
  • Amorphous and crystalline phases of GaO1.5 exhibit different properties.

Purpose of the Study:

  • To investigate oxygen transport mechanisms in amorphous and partially crystalline gallium oxide.
  • To determine oxygen tracer diffusion (D*) and surface exchange (k*) coefficients.
  • To analyze the influence of temperature and oxygen partial pressure on these coefficients.

Main Methods:

  • 18O/16O isotope exchange experiments were employed to trace oxygen diffusion.
  • Time-of-flight secondary ion mass spectrometry (ToF-SIMS) was used for depth profiling.
  • Pulsed laser deposition (PLD) was utilized to fabricate amorphous GaO1.5 thin films.

Main Results:

  • Oxygen tracer diffusion coefficients (D*) and surface exchange coefficients (k*) were quantified.
  • The activation energy for oxygen tracer diffusion in amorphous GaO1.5 was determined to be 0.8 eV.
  • The time-temperature-transformation (TTT) diagram for amorphous GaO1.5 crystallization was established.

Conclusions:

  • Amorphous gallium oxide exhibits distinct oxygen transport characteristics compared to crystalline forms.
  • The determined activation energy provides insight into the diffusion barriers for oxygen.
  • The TTT diagram is essential for controlling the phase stability of GaO1.5 films.