Limiting factors for optical switching using nano-structured graphene-based field effect transistors.

Area of Science:

• Nanotechnology
• Materials Science
• Semiconductor Physics

Background:

• Graphene's unique band diagram makes it promising for nano-scale optoelectronic devices.
• Nano-structured electronic devices require careful consideration of material properties and device architecture.

Purpose of the Study:

• To numerically investigate a functional stack comprising graphene and other materials.
• To extract the capacitance-voltage curve of the stack under practical nano-scale device considerations.
• To develop and examine the speed response of a graphene field-effect transistor (GFET).

Main Methods:

• Numerical investigation of a functional stack including graphene and polycrystalline silicon gates.
• Modeling graphene to accurately represent its role in the device stack.
• Development of a GFET structure for speed response analysis.
• Computation of small-signal current gain under specific bias conditions and carrier mobility.

Main Results:

• The study successfully modeled a graphene-based functional stack.
• A graphene field-effect transistor (GFET) was simulated.
• An intrinsic cutoff frequency of 13.89 GHz was achieved for the GFET.

Conclusions:

• Graphene is a viable material for high-speed nano-scale optoelectronic devices.
• The numerical investigation validates the potential of graphene-based GFETs for achieving high operating frequencies.