Advanced measurement and diagnosis of the effect on the underlayer roughness for industrial standard metrology

In current nanoscale semiconductor fabrications, high dielectric materials and ultrathin multilayers have been selected to improve the performance of the devices. Thus, interface effects between films and the quantification of surface information are becoming key issues for determining the performance of the semiconductor devices. In this paper, we developed an easy, accurate, and nondestructive diagnosis to investigate the interface effect of hafnium oxide ultrathin films. A roughness scaling method that artificially modified silicon surfaces with a maximum peak-to-valley roughness range of a few nanometers was introduced to examine the effect on the underlayer roughness. The critical overlayer roughness was be defined by the transition of RMS roughness which was 0.18 nm for the 3 nm thick hafnium oxide film. Subsequently, for the inline diagnostic application of semiconductor fabrication, the roughness of a mass produced hafnium film was investigated. Finally, we confirmed that the result was below the threshold set by our critical roughness. The RMS roughness of the mass produced hafnium oxide film was 0.11 nm at a 500 nm field of view. Therefore, we expect that the quantified and standardized critical roughness managements will contribute to improvement of the production yield.