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Updated: Jan 30, 2026

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Published on: July 21, 2018
Cubic Phase Light Emitters Hetero-integrated on Silicon
1Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Illinois, 61801, USA.
Abstract:
GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
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