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A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts

Xi Liu1, Zhengliang Xia2, Xiaoshi Jin2

  • 1School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China. liu.sut@live.com.

Nanoscale Research Letters
|February 5, 2019
PubMed

Keywords:
Extreme integrationQuantum simulationRectangular gate U channel

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