Related Experiment Video
Updated: Jan 29, 2026

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Published on: July 21, 2018
Tunable Valley Polarized Plasmon-Exciton Polaritons in Two-Dimensional Semiconductors
Boyang Ding1, Zhepeng Zhang2, Yu-Hui Chen3
1MacDiarmid Institute for Advanced Materials and Nanotechnology, Dodd-Walls Centre for Photonic and Quantum Technologies, Department of Physics , University of Otago , Dunedin 9016 , New Zealand.
Abstract:
Monolayers of transition-metal dicalcogenides have emerged as two-dimensional semiconductors with direct bandgaps at degenerate but inequivalent electronic "valleys", supporting distinct excitons that can be selectively excited by polarized light. These valley-addressable excitons, when strongly coupled with optical resonances, lead to the formation of half-light half-matter quasiparticles, known as polaritons. Here we report self-assembled plasmonic crystals that support tungsten disulfide monolayers, in which the strong coupling of semiconductor excitons and plasmon lattice modes results in a Rabi splitting of ∼160 meV in transmission spectra as well as valley-polarized photoluminescence at room temperature. More importantly we find that one can flexibly tune the degree of valley polarization by changing either the emission angle or the excitation angle of the pump beam. Our results provide a platform that allows the detection, control, and processing of optical spin and valley information at the nanoscale under ambient conditions.
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Group Polarization
Types of Semiconductors
Molecular Shape and Polarity
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

