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Summary

This study presents a solution for nonlinearity and low sensitivity in microbolometers for infrared sensing. Researchers developed an ultra-sensitive CMOS-MEMS temperature sensor with a 31x improvement in frequency shift.

Keywords:
CMOSMEMSinfrared sensormicrobolometermicroelectromechanical systemsmicroresonatorstemperature sensorthermal detector

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Area of Science:

  • Physics
  • Electrical Engineering
  • Materials Science

Background:

  • Microbolometers are key for infrared sensing but have nonlinearity and low temperature sensitivity.
  • Complementary metal-oxide semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) technologies offer advantages but require improvements.

Purpose of the Study:

  • To solve nonlinearity issues in microbolometers.
  • To demonstrate ultra-sensitive CMOS-MEMS temperature sensors for infrared applications.
  • To achieve a significant improvement in temperature sensitivity.

Main Methods:

  • Operating the sensor near the beam bending point to resolve nonlinearity.
  • Analyzing pull-in force and dimensional changes.
  • Utilizing COMSOL multiphysics solver and theoretical analysis.

Main Results:

  • A 31x improvement in absolute frequency shift with ambient temperature change was verified.
  • Nonlinearity was resolved by operating near the beam bending point.
  • Optimum structure derived with 57 µm length and 1 µm thickness, minimizing pull-in force.

Conclusions:

  • The developed CMOS-MEMS sensor offers a reliable solution for nonlinearity and ultra-high sensitivity in IR sensing.
  • The findings provide guidance for state-of-the-art microbolometer designs.
  • Good agreement between theoretical and COMSOL simulations validates the approach.