Related Experiment Video
Updated: Jan 29, 2026

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
Published on: January 31, 2025
Improved Characterization and Accurate Modelling of Drain Current Derivatives of InP Based High Electron Mobility
Muhammad Asif1, Wang Xi1, Zhao Hua1
1Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
Abstract:
InP based HEMTs are of great importance, due to their enormous potential in a high-speed modern microwave circuit, power amplifier, and low noise amplifier applications. Therefore, an accurate non-linear equivalent circuit model of HEMTs is very important for an accurate circuit design. This paper presents improved characterization and accurate modelling of drain current derivatives of InP based HEMTs devices. The proposed model is simple, easy to extract, and suitable for implementation in simulation tools. The Ψ function is extended to increase the flexibility of the proposed model. A gate-drain dependent current source is added to increase the S-parameter fitting. A one-dimensional intrinsic multi-bias capacitances model is introduced to avoid convergence failure. The fitting results of the I-V characteristics and its high order derivatives show high accuracy. In addition, S-parameters and Pout for the proposed model are compared with the original Angelov model. The proposed model shows better accuracy.
More Related Videos
Related Concept Videos
Electron Orbital Model
The first shell is closest to the nucleus, and it has only one subshell with a single spherical orbital called the...
Field Effect Transistor
Bipolar Junction Transistor
Electron Carriers
Over the many stages of cellular respiration, glucose breaks down into carbon dioxide and water. Electron carriers pick up electrons lost by glucose in these reactions, temporarily storing and releasing them into the electron...
Base Quantities and Derived Quantities
The International Organization for...
Measurement: Derived Units

