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Micro-Hall Sensors Based on Two-Dimensional Molybdenum Diselenide
Abdelkader Abderrahmane1, Jong-Min Oh2, Nam-Hoon Kim3
1Division Microélectronique et Nanotechnologie, Centre de Développement des Technologies Avancées (CDTA), Cité 20 août 1956 Baba Hassen, Algier, Algeria.
Abstract:
Sensors and electronic devices based on semiconductors in their two-dimensional forms have many advantages. In this paper, we studied micro-Hall sensors based on two-dimensional molybdenum diselenide for the first time. The micro-Hall sensor based on a Ti/MoSe₂/Ti structure clearly showed a linear dependence of the Hall voltage as a function of the magnetic field, with a magnetic sensitivity of ∼16 V/AT. The magnetic sensitivity was higher in the Au/MoSe₂/Au structure, with a maximum value of ∼120 V/AT at a bias current of 100 mA; the minimum detectable magnetic field was found to be 1.45 μT/Hz1/2 at the same current value, making our new micro-Hall sensor a very good candidate for magnetic sensing applications.
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