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Updated: Jan 29, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy

Matt D Brubaker1, Kristen L Genter1,2, Alexana Roshko1

  • 1Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO, United States of America.

Nanotechnology
|February 19, 2019
PubMed

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