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Updated: Jan 28, 2026

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Published on: September 20, 2021
Engineering Asymmetric Charge Injection/Extraction to Optimize Organic Transistor Performances
Tonnah Kwesi Rockson1, Seolhee Baek1, Hayeong Jang1
1Department of Chemical & Biological Engineering , Hanbat National University , Daejeon 34158 , Republic of Korea.
Optimizing electrode interfaces with asymmetric functionalization significantly boosts organic field-effect transistor (OFET) performance. This study demonstrates a threefold increase in field-effect mobility and a tenfold reduction in contact resistance by strategically modifying electrodes.
Area of Science:
- Materials Science
- Organic Electronics
- Surface Chemistry
Background:
- Organic field-effect transistors (OFETs) are crucial for flexible electronics.
- Enhancing charge injection/extraction at the electrode/organic semiconductor interface is key to improving OFET performance.
- Self-assembled monolayers (SAMs) offer a versatile tool for interface engineering.
Purpose of the Study:
- To investigate the impact of asymmetric electrode functionalization on OFET electrical properties.
- To optimize charge injection and extraction using different SAMs on source/drain electrodes.
- To correlate interface modifications with device performance metrics like mobility and contact resistance.
Main Methods:
- Fabrication of five types of OFETs: pristine, symmetrically functionalized (TP-S/D, PFBT-S/D), and asymmetrically functionalized (PFBT-S/TP-D, TP-S/PFBT-D) electrodes.
- Utilizing thiophenol (TP) and pentafluorobenzenethiol (PFBT) SAMs for electrode functionalization.
- Characterization of device performance, including field-effect mobility (μFET) and contact resistance (RC).
Main Results:
- The asymmetric PFBT-S/TP-D configuration achieved a field-effect mobility of 0.86 ± 0.23 cm² V⁻¹ s⁻¹, approximately three times higher than the pristine case (0.31 ± 0.12 cm² V⁻¹ s⁻¹).
- The asymmetric PFBT-S/TP-D OFET exhibited a contact resistance that was 10-fold lower than the TP-S/PFBT-D case and over five times lower than the pristine case.
- Asymmetric functionalization significantly impacted additional hole density, surface potential, and effective work function, correlating with mobility enhancements.
Conclusions:
- Asymmetric functionalization of source/drain electrodes with specific SAMs is a highly effective strategy for enhancing OFET performance.
- The PFBT-S/TP-D interface modification offers a promising route to significantly improve charge transport and reduce contact resistance in OFETs.
- These findings provide valuable insights for advancing the performance of organic electronic devices, including transistors, solar cells, and sensors.
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