Single step fabrication of Silicon resistors on SOI substrate used as Thermistors

Temperature sensing is one of the important features of Micro Electro Mechanical Systems and a monolithic integration provides advantages for both fabrication simplicity and performance. The use of Silicon On Insulator substrates allows simple fabrication of integrated wires that can be used as thermistors. We fabricated rectangular and triangular silicon wires with different dimensions in a single step fabrication process based on the wet etching of a <110> Silicon On Insulator substrate. We determined the experimental resistivity of the two kinds of devices and tested their performance as thermistors in a temperature range between 24 and 100 °C. The accuracy and normalized sensitivities of our devices were 0.4 °C and 0.3-0.5%/°C, respectively. The potential of the proposed method resides in the possibility of having devices with different shapes in a single straightforward process.