Related Experiment Video
Updated: Jan 28, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Direct evidence of 2H hexagonal Si in Si nanowires
Zhanbing He1, Jean-Luc Maurice, Qikai Li
1State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China. hezhanbing@ustb.edu.cn.
Abstract:
Hexagonal Si (2H polytype) has attracted great interest because of its unique physical properties and wide range of potential applications. For example, it might be used in heterojunctions based on hexagonal and cubic Si. Although hexagonal Si has been reported in Si nanowires, its existence is doubted because structural defects of diamond cubic Si can produce structural signals similar to those attributed to hexagonal Si. Here, through the use of atomic resolution high-angle annular dark-field scanning transmission electron microscopy imaging, we unambiguously report the coherent intergrowth of diamond cubic (3C polytype) and 2H hexagonal Si in Si nanowires grown by chemical vapor deposition. A model describing the intergrowth of 3C and 2H Si is proposed and the reasons for the generation of 2H Si are discussed in detail.
Related Concept Videos
The Evidence for Evolution
Directing Effect of Substituents: meta-Directing Groups
Directing Effect of Substituents: ortho–para-Directing Groups
Directional Terms
Directional Relays
Direct Motor Pathways
The corticospinal tract is responsible for the voluntary movement of the limbs and trunk. It originates in the cerebral cortex of the brain and descends through the cerebrum's internal capsule and...

