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Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism.

Xiao-Ying Zhang1, Chia-Hsun Hsu1, Shui-Yang Lien2,3

  • 1School of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen, 361024, China.

Nanoscale Research Letters
|March 9, 2019
PubMed
Summary
This summary is machine-generated.

Hafnium oxide thin films annealed at different temperatures show distinct crystallization behaviors. Oxygen diffusion at the hafnium oxide/silicon interface leads to amorphous or crystalline silicon dioxide layers depending on the annealing temperature.

Keywords:
AnnealingAtomic layer depositionCrystallizationHafnium oxideInterface

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Thin Film Technology

Background:

  • Hafnium oxide (HfO2) is a crucial gate dielectric material in modern microelectronics.
  • Understanding the thermal stability and crystallization of HfO2 thin films on silicon is vital for device performance.
  • The role of annealing temperature in HfO2 film and interface evolution requires detailed investigation.

Purpose of the Study:

  • To investigate the effect of post-deposition annealing temperature on the crystallization of HfO2 thin films.
  • To analyze the structural changes occurring at the HfO2/Si interface under varying thermal budgets.
  • To correlate annealing temperature with the phase transformation and composition of the interfacial layer.

Main Methods:

  • Remote plasma atomic layer deposition of HfO2 on p-type Si substrates.
  • Rapid thermal annealing in a nitrogen atmosphere at temperatures ranging from below 400°C to above 550°C.
  • Characterization using field emission transmission electron microscopy (FETEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM).

Main Results:

  • Oxygen diffusion from HfO2 to the Si interface was observed during annealing.
  • Below 400°C, HfO2 films and the interfacial layer (HfO2/SiO2 mixture) remained amorphous.
  • Between 450°C and 550°C, HfO2 films became multiphase polycrystalline with crystalline SiO2 at the interface.
  • Above 550°C, HfO2 films transformed to single-phase polycrystalline, and the interfacial layer fully converted to crystalline SiO2.

Conclusions:

  • Post-annealing temperature significantly influences the crystallization of HfO2 thin films and the HfO2/Si interface.
  • The interfacial layer evolves from an amorphous HfO2/SiO2 mixture to crystalline SiO2 with increasing annealing temperature.
  • Controlled annealing is essential for tailoring the microstructure of HfO2/Si stacks for semiconductor applications.