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Distinguishing nitrogen-containing sites in SiO2/4H-SiC(0001) after nitric oxide annealing by X-ray absorption
Noritake Isomura1, Katsuhiro Kutsuki1, Keita Kataoka1
1Toyota Central R&D Laboratories Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan.
Abstract:
The atomic structure of nitrogen at the SiO2/4H-SiC(0001) interface has been investigated using X-ray absorption spectroscopy (XAS) in two nitric oxide annealed samples, one of which was oxidized in dry O2 (NO-POA) prior to the experiment. The peak shapes and energies of the observed and simulated spectra are in agreement and indicate that the N-containing sites could be the substitutional C site at the interface for the NO-annealed sample and the interstitial site in the interior of SiC for the NO-POA-annealed sample. XAS analysis distinguished between the N-containing sites at the SiO2/SiC interface.
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