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Control of the metal/WS2 contact properties using 2-dimensional buffer layers
Krystian Nowakowski1, Rik van Bremen, Harold J W Zandvliet
1Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands. Krystian.Nowakowski@icfo.eu bampoulis@ph2.uni-koeln.de.
Nanoscale
|March 13, 2019
Summary
Researchers explored buffer layers like graphene and MoSe2 to control Schottky barrier height in 2D electronic devices. These thin layers effectively tune contact resistance and barrier properties for better device performance.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Transition metal dichalcogenides (TMDCs) are key materials for 2D electronics.
- Controlling metal/TMDC junction potential barriers is crucial for device applications.
Purpose of the Study:
- To investigate how graphene and MoSe2 buffer layers modify Schottky barrier height (SBH) at Pt/WS2 junctions.
- To understand the impact of buffer layer thickness on charge transport properties.
Main Methods:
- Utilized conductive atomic force microscopy (c-AFM) to probe Pt/WS2 junctions with graphene and MoSe2 buffer layers.
- Analyzed the dependence of transport characteristics on buffer layer thickness.
Main Results:
- Graphene buffers significantly reduce contact resistance in Pt/WS2 junctions.
- Molybdenum diselenide (MoSe2) buffers lower the Schottky barrier while preserving rectifying behavior.
- Charge transport properties are tunable by adjusting the thickness of both graphene and MoSe2 layers.
- Single-layer graphene edges form ohmic contacts with WSe2 substrates.
Conclusions:
- Atomically thin MoSe2 and graphene are effective for tuning Schottky barriers in TMDC contacts.
- Buffer layer engineering offers a viable strategy for fabricating advanced 2D electronic devices.
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