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Theoretical investigation of Hall sign change in SrRuO3
Shih-Jye Sun1,2, Hsiung Chou1,2, Ssu-Ting Lin2
1Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan, Republic of China.
Abstract:
The appearance of Hall sign change in perovskite SrRuO3 thin films at Curie temperature was confirmed from our fabricated samples and the result was simulated by our proposed theoretical model. In particular, our simulation results are consistent with experimental results mainly due to the introduction of an impurity band in a two-band model. We found the other important factors in our theory responsible for observed consistency Hall measurements are the itinerant carrier density and its intrinsic carrier type. Eventually the theory possibly interprets the mechanism of Hall sign change.
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