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Enhancement of InN Luminescence by Introduction of Graphene Interlayer
Darius Dobrovolskas1, Shingo Arakawa2, Shinichiro Mouri3
1Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania. darius.dobrovolskas@ff.vu.lt.
Nanomaterials (Basel, Switzerland)
|March 16, 2019
Summary
Introducing a multilayer graphene interlayer significantly boosts Indium Nitride (InN) luminescence by reducing lattice mismatch. An Aluminum Nitride (AlN) buffer further enhances InN quality and emission intensity.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Indium Nitride (InN) epilayer growth on Gallium Nitride (GaN) templates faces challenges due to lattice mismatch.
- Graphene's unique properties offer potential solutions for epitaxial growth of nitride semiconductors.
Purpose of the Study:
- To investigate the effect of a multilayer graphene interlayer on Indium Nitride (InN) luminescence.
- To optimize InN deposition conditions and assess the impact of buffer layers on material quality.
Main Methods:
- Radio-frequency plasma-assisted molecular beam epitaxy (MBE) for InN deposition.
- Spatially-resolved photoluminescence spectroscopy using confocal microscopy for characterization.
- Introduction of multilayer graphene and Aluminum Nitride (AlN) buffer layers.
Main Results:
- Multilayer graphene interlayer substantially enhances InN luminescence by mitigating lattice mismatch via van der Waals interactions.
- Optimal InN deposition temperature determined to be approximately 375 °C.
- Elimination of granularity and further enhancement of emission intensity observed with an AlN buffer layer between graphene and InN.
Conclusions:
- Multilayer graphene serves as an effective interlayer for high-quality InN growth.
- The combination of graphene and AlN buffer layers significantly improves InN luminescence and material quality.
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