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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric

Seungbeom Choi1, Kyung-Tae Kim2, Sung Kyu Park3

  • 1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea. oyenice@skku.edu.

Materials (Basel, Switzerland)
|March 16, 2019
PubMed

Keywords:
high mobilityhigh-k dielectricinkjet printingmetal-oxide semiconductorsthin-film transistors

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