Scalable Patterning of Organic Electrochemical Transistors for Logic Gates and Neuromorphic Computing

Organic electrochemical transistors (OECTs) are promising building blocks for bioelectronics owing to their efficient ion-electron coupling, soft-material compatibility and high transconductance. However, their large off-state currents and poor scalability have so far limited high-density integration and circuit-level functionality. Here we introduce a patterning strategy suitable for solution‑processable organic semiconductors, enabling high‑fidelity OECT arrays with suppressed leakage and off‑state currents, on/off ratios up to 10⁷, and good device‑to‑device uniformity. Leveraging these patterned OECTs, we demonstrate the integration of logic circuits, including complementary inverters as well as NAND and NOR gates, exhibiting high voltage gain (up to 203 V/V), large noise margins (92.17%) and stable operation at low supply voltages. Benefiting from the patterning approach and the AlO_x-induced suppression of off-state current, the static power consumption of the inverter is reduced by approximately 90%. Beyond digital logic, we further show that these devices emulate key synaptic functions such as short-term plasticity and enable reservoir computing tasks, defining a manufacturable platform for integrated bioelectronic circuitry and neuromorphic architectures. This patterning strategy therefore provides a general route toward high-density biointerfaces and next-generation brain-computer interfaces.