Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe_0.93Mn_0.05Ti_0.02)O₃ Thin Film

A recent hot-spot topic for flexible and wearable devices involves high-performance nonvolatile ferroelectric memories operating under compressive or tensile mechanical deformations. This work presents the direct fabrication of a flexible (Mn,Ti)-codoped multiferroic BiFeO₃ film capacitor with Pt bottom and Au top electrodes on mica substrate. The fabricated polycrystalline Bi(Fe_0.93Mn_0.05Ti_0.02)O₃ film on mica exhibits superior ferroelectric switching behavior with robust saturated polarization ( P_s ∼ 93 μC/cm²) and remanent polarization ( P_r ∼ 66 μC/cm²) and excellent frequency stability (1-50 kHz) and temperature resistance (25-200 °C), as well as reliable long-lifetime operation. More saliently, it can be safely bent to a small radius of curvature, as low as 2 mm, or go through repeated compressive/tensile mechanical flexing for 10³ bending times at 4 mm radius without any obvious deterioration in polarization, retention time at 10⁵ s, or fatigue resistance after 10⁹ switching cycles. These findings demonstrate a novel route to designing flexible BiFeO₃-based ferroelectric memories for information storage and data processing, with promising applications in next-generation smart electronics.