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Updated: Jan 27, 2026

High Pressure Single Crystal Diffraction at PX^2
Published on: January 16, 2017
Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam
Jiao Fu1, Tianfei Zhu1, Yan Liang1
1Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China.
Abstract:
Fabrication of single crystal diamond capacitive pressure sensor is presented. Firstly, the single crystal diamond cantilever beam was formed on HPHT diamond substrate by using selective high-energy ion implantation, metal patterning, ICP etching and electrochemical etching techniques. Secondly, on this diamond cantilever beam, the desired electrode patterns were processed with photolithography and metal evaporation methods. Furthermore, the displacements of cantilever beam under different pressure conditions were investigated by atomic force microscopy. The capacitance-voltage curves of single crystal diamond cantilever beam and substrate under different force loading conditions were measured by using Agilent B1505A parameter analyzer. The results show that sensitivity increases with the enlargement of electrode area of cantilever beam, and decreases with the rise of measurement frequency.
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