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Updated: Jan 27, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals
Alberto Ciarrocchi1,2, Dmitrii Unuchek1,2, Ahmet Avsar1,2
1Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Abstract:
Long-lived interlayer excitons in van der Waals heterostructures based on transition metal dichalcogenides, together with unique spin-valley physics, make them promising for next-generation photonic and valleytronic devices. While the emission characteristics of interlayer excitons have been studied, efficient manipulation of their valley-state, a necessary requirement for information encoding, is still lacking. Here, we demonstrate comprehensive electrical control of interlayer excitons in a MoSe2/WSe2 heterostructure. Encapsulation of our well-aligned stack with hexagonal boron nitride (h-BN) allows us to resolve two separate narrow interlayer transitions with opposite helicities under circularly polarized excitation, either preserving or reversing the polarization of incoming light. By electrically controlling their relative intensities, we realize a polarization switch with tuneable emission intensity and wavelength. Finally, we demonstrate large Zeeman shifts of these two transitions upon application of an external magnetic field. These results are interpreted within the picture of moiré-induced brightening of forbidden optical transitions. The ability to control the polarization of interlayer excitons is a step forward towards the manipulation of the valley degree-of-freedom in realistic device applications.
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