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Updated: Jan 27, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Enhanced mobility and controlled transparency in multilayered reduced graphene oxide quantum dots: a charge transport
Mawin J M Jimenez1, Rafael F de Oliveira2, Carlos César B Bufon2
1Department of Applied Physics, 'Gleb Wataghin' Institute of Physics (IFGW), University of Campinas (UNICAMP), 13083-970, Campinas, SP, Brazil.
None:
Reduced graphene oxide (rGO) layers are known to be significantly conductive along the basal plane throughout delocalized sp2 domains. Defects present in rGO implies in disordered systems with numerous localized sites, resulting in a charge transport governed mainly by a 2D variable range hopping (VRH) mechanism. These characteristics are observed even in multilayered rGO since the through-plane conduction is expected to be insubstantial. Here, we report on the multilayer assembly of functionalized rGO quantum dots (GQDs) presenting 3D VRH transport that endows elevated charge carrier mobility, ca ∼ 236 cm2 V-1 s-1. Polyelectrolyte-wrapped GQDs were assembled by layer-by-layer technique (LbL), ensuring molecular level thickness control for the formed nanostructures, along with the adjustment of the film transparency (up to 92% in the visible region). The small size and the random distribution of GQDs in the LbL structure are believed to overcome the translational disorder in multilayered films, contributing to a 3D interlayer conduction that enhances the electronic properties. Such high-mobility, transparency-tunable films assembled by a cost-effective method possess interesting features and wide applicability in optoelectronics.
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