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Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer

Shenawar Ali Khan1, Hyeon-Seok Jeong2, Sheik Abdur Rahman1

  • 1Department of Electronic Engineering, Jeju National University, Jeju 63243, Korea.

Journal of Nanoscience and Nanotechnology
|March 28, 2019
PubMed

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