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Updated: Jan 27, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Analytical Study on Junction Temperatures of GaInN and AlGaN Ultraviolet Light Emitting Diodes
Ching-Yen Ho1, Bor-Chyuan Chen2, Jing Zhou1
1Department of Mechanical and Electrical Engineering, Dongguan Polytechnic, Dongguan 523808, Guangdong, China.
Abstract:
Junction temperatures of GaInN and AlGaN UV LEDs are analytically investigated in this paper. GaInN and AlGaN UV LEDs have a wide variety of applications such as lighting, displays, spectrofluometry, photocatalytic processes, and high resolution optics. An analytical method is employed to analyze the junction temperature variations of GaInN and AlGaN UV LEDs with injection currents. The junction temperature is related to material properties, quantum efficiency, thermal resistance, and series resistance of LEDs. The results of GaInN and AlGaN UV LEDs predicted by this study agree with these obtained from emission peak shift method and forward voltage method.
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