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The frequency-domain technique, commonly used in analyzing and designing feedback control systems, is effective for linear, time-invariant systems. However, it falls short when dealing with nonlinear, time-varying, and multiple-input multiple-output systems. The time-domain or state-space approach addresses these limitations by utilizing state variables to construct simultaneous, first-order differential equations, known as state equations, for an nth-order system.
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A High Full Well Capacity CMOS Image Sensor for Space Applications.

Woo-Tae Kim1, Cheonwi Park2, Hyunkeun Lee3

  • 1School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Korea. wtkim@gist.ac.kr.

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Summary
This summary is machine-generated.

This study introduces a novel CMOS image sensor (CIS) pixel design that significantly boosts full well capacity (FWC) for space applications. The enhanced design achieves a high FWC and improved modulation transfer function (MTF) without compromising pixel area.

Keywords:
CMOS image sensorsmultiple charge transferradiation damage effectsspace applicationswide dynamic range

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Area of Science:

  • Electronics
  • Semiconductor Devices
  • Space Technology

Background:

  • CMOS image sensors (CIS) are crucial for space applications, but require high full well capacity (FWC) to handle varying light intensities.
  • Existing pixel designs often face limitations in FWC within constrained pixel areas, impacting performance in demanding environments.

Purpose of the Study:

  • To present a novel CIS pixel design that enhances FWC for space applications.
  • To analyze the impact of the new design on modulation transfer function (MTF) and radiation effects.
  • To demonstrate the feasibility of the proposed techniques through fabrication and testing.

Main Methods:

  • Integration of a Metal-Oxide-Semiconductor (MOS) capacitor within the pixel architecture.
  • Multiple charge transfer mechanism from photodiode to in-pixel capacitor based on light intensity.
  • Fabrication of the CIS using a 0.11 μm 1-poly 4-metal CIS process.
  • Evaluation of FWC, MTF, and radiation damage effects.

Main Results:

  • Achieved a high measured FWC of 103,448 electrons.
  • Demonstrated a 300% improvement in Modulation Transfer Function (MTF).
  • Successfully fabricated and tested the CIS with a 6.5 μm pixel pitch.

Conclusions:

  • The proposed pixel design effectively increases FWC in a limited area for space CIS.
  • The integration of an MOS capacitor and multiple charge transfer enhances light intensity handling.
  • The fabricated CIS shows significant improvements in FWC and MTF, suitable for space missions.