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Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)

Hwa Young Gu1, Sangwan Kim2

  • 1Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea. dogn1006@ajou.ac.kr.

Micromachines
|April 3, 2019
PubMed

Keywords:
FinFETambipolar currentscalingsubthreshold swingtunnel field-effect transistors (TFETs)

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