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Updated: Jan 26, 2026
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
ZnO/GaN Heterostructure as Ultraviolet Photodetector Fabricated by One-Step Aqueous Method
Chengjuan Pan1, Naisen Yu1, Yan Qi1
1Liaoning Key Laboratory of Optoelectronic Films and Materials, School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600, China.
Abstract:
ZnO thin films were fabricated on p-GaN substrate with zinc acetate as precursors by one-step aqueousmethod in this paper. The morphological and structural properties of ZnO/GaN heterostructure were studied. Meanwhile, the ultraviolet photodetector (UV) device based on ZnO/GaN heterostructure was fabricated and showed excellent UV response. The results demonstrate that the fabrication of large-scale ZnO/GaN heterostructure was greatly facilitated with relatively low cost by one-step growth method.
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