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Highly Integrated MEMS Magnetic Sensor Based on GMI Effect of Amorphous Wire
Jiawen Chen1, Jianhua Li2, Lixin Xu3
1School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China. 13718925459@163.com.
This study presents a highly integrated amorphous wire Giant Magneto-impedance (GMI) magnetic sensor. The developed sensor achieves high sensitivity and resolution for magnetic field detection.
Area of Science:
- Materials Science
- Electrical Engineering
- Sensor Technology
Background:
- Giant Magneto-impedance (GMI) sensors offer high sensitivity for magnetic field detection.
- Micro Electro Mechanical Systems (MEMS) technology enables miniaturization and integration of sensor components.
Purpose of the Study:
- To design and develop a highly integrated amorphous wire GMI magnetic sensor using MEMS technology.
- To analyze the sensor's structure, packaging, sensing principle, and signal conditioning circuit.
- To investigate the relationship between the GMI effect and excitation current frequency.
Main Methods:
- Fabrication of a highly integrated amorphous wire GMI sensor utilizing MEMS technology.
- Integration of a signal conditioning circuit and data acquisition card for digital signal conversion.
- Experimental testing and calibration of the sensor's output, exploring GMI effect variations with excitation frequency.
Main Results:
- The sensor demonstrated the largest GMI effect at an excitation frequency of 60 MHz.
- Achieved a high sensitivity of 4.8 V/Oe.
- Obtained a resolution of 40 nT.
Conclusions:
- The developed MEMS-based amorphous wire GMI sensor is highly integrated and effective.
- The sensor exhibits optimal performance at 60 MHz excitation frequency, offering excellent sensitivity and resolution.
- This technology holds promise for advanced magnetic sensing applications.
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