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Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19
Patrick Gougeon1, Philippe Gall1, Rabih Al Rahal Al Orabi1
1Univ Rennes, CNRS, ISCR UMR 6226, INSA Rennes, ENSC Rennes , F-35000 Rennes , France.
Abstract:
Mo-based cluster compounds are a large class of materials with complex crystal structures that give rise to very low lattice thermal conductivity. Here, we report on the crystal structure and transport property measurements (5-800 K) of the novel Tl-filled compound Ag3Tl2Mo15Se19. This compound adopts a crystal structure described in the rhombohedral R3 c space group [ a = 9.9601(1) Å, c = 57.3025(8) Å, and Z = 6] built by the covalent arrangement of octahedral Mo6 and bioctahedral Mo9 clusters in a 1:1 ratio, with the Ag and Tl atoms filling the large cavities between them. Transport property measurements performed on polycrystalline samples indicate that this compound behaves as a heavily doped semiconductor with mixed electrical conduction. Electronic band structure calculations combined with a semiclassical approach using the Boltzmann transport equation are in good agreement with these measurements. This compound exhibits a lattice thermal conductivity as low as 0.4 W m-1 K-1 because of highly disordered Ag and Tl atoms. Because of the low thermopower values induced by the mixed electrical conduction, the dimensionless thermoelectric figure of merit ZT remains moderate with a peak value of 0.18 at 750 K.
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