Related Experiment Video
Updated: Jan 26, 2026

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Field-Free Deterministic Magnetization Switching with Ultralow Current Density in Epitaxial Au/Fe4N Bilayer Films
Hongwei Li1, Gaili Wang1, Dan Li1
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Materials Science and Engineering , Sun Yat-Sen University , Guangzhou 510275 , People's Republic of China.
Abstract:
Current-induced magnetization switching was investigated in Au/Fe4N bilayer films grown by a plasma-assisted molecular beam epitaxy (PA-MBE) system. Depending on lattice distortion and interfacial coupling induced by substrates, the Fe4N layer could be divided into two sublayers having different magnetic anisotropies. The bottom sublayer shows perpendicular magnetic anisotropy (PMA), while the top one has in-plane magnetic anisotropy (IMA). Coupling between the two sublayers provides an extra in-plane effective field and enables a field-free magnetization switching in the bilayer films. By summarizing a series of Hall measurements, a switching phase diagram was obtained. Temperature-dependent switching behaviors demonstrate that the threshold current density for the field-free magnetization switching, which is much smaller than that of pervious reports, increases with decreasing temperature and shows similar temperature dependences to those of coercivity.
Related Concept Videos
Magnetic Field Of A Current Loop
Force On A Current Loop In A Magnetic Field
Torque On A Current Loop In A Magnetic Field
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
Current Density
Boundary Conditions for Current Density
Magnetic Fields
A magnetic field is defined by the force that a charged particle experiences...

