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Pattern matching analysis of electron backscatter diffraction patterns for pattern centre, crystal orientation and
Tomohito Tanaka1, Angus J Wilkinson2
1Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK; Nippon Steel & Sumitomo Metal Corporation, 20-1 Shintomi, Futtsu, Chiba, Japan.
Ultramicroscopy
|April 21, 2019
Summary
This study introduces a pattern matching method for precise electron backscatter pattern (EBSP) analysis, accurately determining crystal orientation and pattern center (PC) with minimal error, outperforming traditional techniques.
Area of Science:
- Materials Science
- Crystallography
- Computational Methods
Background:
- Electron Backscatter Diffraction (EBSD) is crucial for microstructural analysis.
- Accurate determination of pattern center (PC) and crystal orientation is vital for EBSD.
- Existing methods may have limitations in precision and robustness.
Purpose of the Study:
- To develop and validate a pattern matching approach for precise EBSP analysis.
- To quantify the error and precision of the proposed method.
- To compare the performance against conventional analysis techniques.
Main Methods:
- Utilized pattern matching between target and dynamically simulated Electron Backscatter Patterns (EBSPs).
- Employed a global optimization algorithm for PC and crystal orientation determination.
- Introduced noise, optical distortion, and image binning to assess robustness.
- Validated accuracy using High Resolution (HR-) EBSD and simulated patterns.
Main Results:
- Achieved high precision with errors <10^-5 of pattern width for PC and <0.01° for orientation in ideal conditions.
- Demonstrated that noise and distortions influence accuracy but the method remains superior.
- Showed improved angular resolution compared to Hough transform-based analysis.
- Successfully applied the method to experimental data for strain analysis.
Conclusions:
- The pattern matching method offers superior accuracy and precision for EBSP analysis.
- The technique is robust against common image imperfections.
- This approach enhances the reliability of crystallographic and strain analysis in materials science.
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